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ZXM64P03X
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-30
?
?
?
?
?
?
-1
±100
V
μ A
nA
I D = -250 μ A, V GS = 0V
V DS = -30V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 and 11)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 11)
Reverse Recovery Charge (Note 11)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
-1.0
?
2.3
?
?
?
?
?
?
?
30.2
27.8
?
75
100
?
-0.95
?
?
V
m ?
S
V
ns
nC
I D = -250 μ A, V DS = V GS
V GS = -10V, I D = -2.4A
V GS = -4.5V, I D = -1.2A
V DS = -10V, I D = -1.2A
T J = +25°C, I S = -2.4A, V GS = 0V
T J = +25°C, I F = -2.4A,
di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
?
?
?
?
?
?
?
?
?
?
825
250
80
4.4
6.2
40
29.2
?
?
?
?
?
?
?
?
?
?
46
9
11.5
pF
ns
nC
V DS = -25V, V GS = 0V
f = 1.0MHz
V DD = -15V, I D = -2.4A,
R G = 6.2 ? , R D = 6.2 ?
(Refer to test circuit)
V DS = -24V, V GS = -10V,
I D = -2.4A
(Refer to test circuit)
Notes:
9. Measured under pulsed conditions. Pulse width = 300 μ s. Duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
ZXM64P03X
Document Number DS33487 Rev. 2 - 2
3 of 7
www.diodes.com
October 2012
? Diodes Incorporated
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